The FAN3226-29 family of dual 2 A gate drivers is designed to drive N-channel enhancement-mode MOSFETs in low-side switching applications by providing high peak current pulses during the short switching intervals. The driver is available with either TTL or CMOS input thresholds. Internal circuitry provides an under-voltage lockout function by holding the output low until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFET.
技术特性
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功能图框 FUNCTIONAL BLOCK DIAGRAM |
产品 | 生态状况 | 价格 | 封装信息 | 封装标记规则 | 资格支持 |
FAN3229TMX_F085 | 量产 从2012年7月起符合绿色标准 |
$1.1 |
SO 8L NB 示意图
胶带卷轴 |
第一行:$Y (飞兆徽标) &Z (工厂编码) &2 (2 位日期代码) &K 第二行:FAN 第三行:3229T |
Moisture Sensitivity Level (MSL) : 3 Max Reflow Temp : 260 |
应用指南 | 说明 |
AN-6069 | 低端门极驱动器的应用和比较评价(586 K) 2013年4月03日 |
概述 | 文档编号 | 版本 |
Dual 2-A High-Speed, Low-Side Gate Drivers | FAN3229T_F085 | 1 |