MRF10005 Microwave Power Silicon Bipolar Transistor 5.0 W, 960–1215 MHz, 28V
Designed for CW and long-pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range with high overall duty cycles.
技术特性 Features
- Guaranteed performance @1.215GHz, 28Vdc
- Output power: 5.0W CW
- Minimum gain = 8.5dB, 10.3dB (Typ.)
- RF performance curves for 28 Vdc and 36 Vdc operation
- 100% tested for load mismatch at all phase angles with 10:1 VSWR
- Hermetically sealed industry standard package
- Silicon nitride passivated
- Gold metallized, emitter ballasted for long life and resistance to metal migration
- Internal input matching for broadband operation
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