MRF10120 Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960–1215MHz
Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters.
技术特性 Features
- Guaranteed performance @ 1.215 GHz, 36 Vdc
Output power = 120 W Peak
Gain = 7.6 dB min., 8 .5 dB (typ.)
- 100% tested for load mismatch at all phase angles with 3:1 VSWR
- Hermetically sealed industry standard package
- Silicon nitride passivated
- Gold metalized, emitter ballasted for long life and resistance
to metal migration
- Internal input and output matching for broadband operation
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