MRF151G RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.
技术特性 Features
- Output Power — 300 W
- Gain — 14 dB (16 dB Typ)
- Efficiency — 50%
- Low Thermal Resistance — 0.35°C/W
- Ruggedness Tested at Rated Output Power
- Nitride Passivated Die for Enhanced Reliability
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