MRF160 The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V
Designed primarily for wideband large–signal output and driver from 30–500 MHz.
技术特性 Features
- Guaranteed 28 V, 500 MHz performance
Output power = 4.0 W
Gain = 16 dB (min.)
Efficiency = 55% (typ.)
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
- 100% Tested for load mismatch at all phase angles with 30:1 VSWR
- Low Crss – 0.8 pF Typical at VDS = 28 V
|
|
