MRF313 The RF Line NPN Silicon High-Frequency Transistor 1.0W, 400MHz, 28V
Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio.
技术特性 Features
- Specified 28 V, 400 MHz characteristics —
Output power = 1.0 W
Power gain = 15 dB min.
Efficiency = 45% typ.
- Emitter ballast and low current density for improved MTBF
- Common emitter for improved stability
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