MRF321 The RF Line NPN Silicon Power Transistor 10W, 400MHz, 28V
Designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range.
技术特性 Features
- Guaranteed performance at 400 MHz, 28 Vdc
Output power = 10 W
Power gain = 12 dB min.
Efficiency = 50% min.
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Gold metallization system for high reliability
- Computer–controlled wirebonding gives consistent input Impedance
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