MRF421 The RF Line NPN Silicon Power Transistor 100W(PEP), 30MHz, 28V
Designed primarily for application as a high–power linear amplifier from 2.0 to 30 MHz.
技术特性 Features
- Specified 12.5 V, 30 MHz characteristics —
Output power = 100 W (PEP)
Minimum gain = 10 dB
Efficiency = 40%
- Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
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