M65609E

KeyValue
Temp. Range (deg C):-55 to 125
Operating Voltage (Vcc):3.0 to 3.6

Very low power CMOS static RAM organized as 131,072 by 8 bits.Utilizing an array of six transistors (6T) memory cells, it combines an extremely low standby supply current with a fast access time at 40ns. The high stability of the 6T cell protects against soft errors due to noise.This RAM is processed according to the methods of the latest revision of the MIL PRF 38535 and ESCC 9000. It is produced by the same process as the MH1RT sea of gates series.

DataSheet 数据手册
  • M65609E Complete(文件大小: 838 KB, 15 页数, 修订版 J, 更新时间: 11/2013)
Brochures and Flyers
Overview
M65609E Complete (文件大小: 838 KB, 15 页数, 修订版 J, 更新时间: 11/2013)
Atmel Aerospace Rad-Hard Integrated Circuits (文件大小: 785 KB, 16 页数, 更新时间: 06/2015)
Aerospace Products Quality Flows (文件大小: 154 KB, 7 页数, 修订版 G, 更新时间: 06/2014)