HSCH-5310 梁式引线肖特基二极管 _ BDTIC 中国领先电子元器件代理商

HSCH-5310 梁式引线肖特基二极管

特点

HSCH-531x 系列中屏障梁式引线肖特基二极管非常适合 1-26 GHz 混频器和侦测器应用。HSCH-5314 和 HSCH-5318 确保 RF 测试性能，而其他产品仅有直流测试而已。Vbr=4V，最大 (Vf)=500mV，最大漏电流 (Ir)=100nA。

Specification	Value
Lifecycle	Active
Distrib. Inventory	Yes
Bias	20µA
Connection	Single
Ct Pf	0.1
Dyn Res In Ohms	20.0
RoHS6 Compliant	Y
Max Cap In Pf	0.1
Max Fwd Vo In V	500.0
Max Fwd Vo Ref In Ma	1.0
Max Qty of Samples	25
Mounting Direction	Top
Mounting Method	Lead Bond
Package	Beam Lead
Product Type	Microwave Detector
Series Res In Ohms	20.0
Vbr V	4.0
Vf Mv	500.0
Video Res In Ohms	1.4
Ct (pF)	0.1
VBR (V)	4
VF (mV)	500
Samples Available	Yes

Application Note (17)

AN 956-5: Dynamic Range Extension Schottky Detectors.pdf（08/16/2010）
AN 988: All Schottky Diodes are Zero Bias Detectors.pdf（08/14/2010）
AN 986: Square Law Linear Detection.pdf（08/14/2010）
AN 963: Matching Techniques for Mixers Detectors.pdf（08/14/2010）
AN 987: Is Bias Current Necessary.pdf（08/14/2010）
AN 1088: Designing the Virtual Battery.pdf（07/22/2010）
AN 992: Beam Lead Attachment Methods.pdf（07/19/2010）
AN 9561: The Criterion for the Tangential Sensitivity Measurement.pdf（07/19/2010）
AN A004R: Electrostatic Discharge mage Control.pdf（07/14/2010）
AN 956-3 Flicker Noise Schottky Diodes.pdf（07/13/2010）
AN 956-6: Temperature Dependence Schottky Detector Voltage Sensitivity.pdf（06/28/2010）
AN 9931: The Stress Relief Beam Lead Diode Assembly.pdf（06/07/2010）
AN 9441: Microwave Transistor Bias Considerations.pdf（05/11/2010）
AN A006: Mounting Considerations for Microwave Semiconductors.pdf（07/22/2009）
AN 993: Beam Lead Device Bonding to Soft Substrates.pdf（04/11/2007）
AN 1156: Diode Detector Simulation EEs ADS Softward.pdf（02/22/2007）
AN 923: Schottky Barrier Video Detectors.pdf（12/09/2006）

Data Sheet (1)

HSCH-53XX Series - Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz).pdf（09/21/2006）

Product Change Notice (PCN) (4)

Qualifying New Contract Manufacturers.pdf（03/02/2009）
CCN 022802PSD1 - Standardize gel-pack material for Avago Technologies' silicon diode, bipolar transistor and monolithic amplifier die sales.pdf（10/28/2005）
CCN021402AT1 - Transfer of semiconductor wafer fabrication.pdf（10/28/2005）
CCN082401TC1 - Si wafer epitaxy transferred from Newark to San Jose, CA fab.pdf（08/24/2001）

Reliability Data Sheet (1)

HSCH-5300 and HSCH-5500 Series, Tri Metal Beam Lead Schottky Diodes.pdf（08/28/2008）

S-Parameter (2)

HS532020.S1P - HSCH-5320 and HSCH-5340 s parameters at 20 mA.etc（10/28/2005）
HS532001.S1P - HSCH-5320 and HSCH-5340 s parameters at 1 mA.etc（10/28/2005）

Spice Model (1)

HSCH-5310_SPICE.etc（02/26/2000）

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