CY7C2170KV18-550BZXC

CY7C2170KV18-550BZXC
ArchitectureDDR-II+ CIO, ODT
Automotive QualifiedN
Burst Length (Words)2
Density (Kb)18432
Density (Mb)18
Frequency (MHz)550
Max. Operating Temp. (°C)70
Max. Operating VCCQ (V)1.90
Max. Operating Voltage (V)1.90
Min. Operating Temp. (°C)0
Min. Operating VCCQ (V)1.40
Min. Operating Voltage (V)1.70
Organization (X x Y)512Kb x 36
Part FamilyDDR-II+ CIO, ODT
Tape & ReelN
Temp. ClassificationCommercial
Pricing & Inventory Availability
1-9 unit Price*10-24 unit Price*25-99 unit Price*100-249 unit Price*250-999 unit Price*1000+ unit Price*
$72.87$64.99$60.27$55.54$53.57$51.21
Datasheet
CY7C2168KV18, CY7C2170KV18: 18-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Datasheet.pdf English , 02/02/2016
Models
CY7C2170KV18_Verilog.zip English , 01/05/2011
Qualification Reports
100901: LL65 18 MEG QDR/DDR SYNCHRONOUS PRODUCT QUALIFICATION REPORT English , 09/15/2016