FDMS8680: 30V N-Channel PowerTrench® MOSFET

The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

特性

• Max r_DS(on) = 7.0mΩ at V_GS = 10V, I_D = 14A
• Max r_DS(on) = 11.0mΩ at V_GS = 4.5V, I_D = 11.5A
• Advanced Package and Silicon combination forlow r_DS(on) and high efficiency
• MSL1 robust package design
• RoHS compliant

Application Notes