BFP650F

NPN Silicon Germanium RF Transistor

ParametricBFP650F
VCEO  max4.0V
IC  max150.0mA
NF0.8dB
Gmax21.5dB
OIP331.0dBm
OP1dB17.5dBm
PackageTSFP-4
Sales Product NameBFP650F
OPNBFP650FH6327XTSA1
Product Statusactive and preferred
Package NamePG-TSFP-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Summary of Features:
  • For medium power amplifiers and driver stages
  • High OIP3 and P-1dB
  • Ideal for low phase noise oscilators
  • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz
  • Noise figure F = 0.8 dB at 1.8 GHz
  • 70 GHz fT- Silicon Germanium technology
  • Pb-free (RoHS compliant) package
  • Qualification report according to AEC-Q101 available
Target Applications:
  • Driver amplifier
  • ISM bands 434 and 868 MHz
  • 1.9 GHz cordless phones
  • CATV LNA
  • Transmitter driver amplifier
  • 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
  • Output stage LNA for active antennas
  • TV, GPS, SDARS
  • 2.4 / 5 GHz WLAN
  • 2.4 / 3.5 / 5 GHz WiMAX, etc.
  • Suitable for 5 - 10.5 GHz oscillators
Data Sheet
TitleSizeDateVersion
BFP650F,EN551 KB02 五月 201401_01
Application Notes
TitleSizeDateVersion
AN153 - Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Amplifier (LNA) Application1.3 MB08 十二月 2009
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_10-57-59_MA000895778_PG-TSFP-4-1.pdf23 KB31 十月 201301_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - High Linearity Si- and SiGeC-Transistors for use up to 6 GHz - Altium - v1.04.5 MB23 十月 201301_00
PCB Footprints & Symbols - High Linearity Si- and SiGeC-Transistors for use up to 6 GHz - Cadence - v1.0236 KB23 十月 201301_00
PCB Footprints & Symbols - High Linearity Si- and SiGeC-Transistors for use up to 6 GHz - Eagle - v1.055 KB23 十月 201301_00
PCB Footprints & Symbols - High Linearity Si- and SiGeC-Transistors for use up to 6 GHz - Mentor - v1.0359 KB23 十月 201301_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP760 BOARDThe BFP760 is a high linearity and low noise wideband bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-ENEN21.4 MB11 十二月 201502_00
Simulation Data
TitleSizeDateVersion
BFP650F237 KB15 六月 2010
Package Data
TitleSizeDateVersion
PG-TSFP-4-1 | BFP650FH6327XTSA1EN494 KB11 四月 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - High Linearity Si- and SiGeC-Transistors for use up to 6 GHz - Altium - v1.04.5 MB23 十月 201301_00
PCB Footprints & Symbols - High Linearity Si- and SiGeC-Transistors for use up to 6 GHz - Cadence - v1.0236 KB23 十月 201301_00
PCB Footprints & Symbols - High Linearity Si- and SiGeC-Transistors for use up to 6 GHz - Eagle - v1.055 KB23 十月 201301_00
PCB Footprints & Symbols - High Linearity Si- and SiGeC-Transistors for use up to 6 GHz - Mentor - v1.0359 KB23 十月 201301_00
EN BFP650F
AN153 - Infineon’s BFP650F RF Transistor in High Linearity 2.4 GHz Low Noise Amplifier (LNA) Application BFP650F
MCDS_2013-08-29_10-57-59_MA000895778_PG-TSFP-4-1.pdf BFP650F
EN BFQ790
BFP650F BFP650F
EN BFP650F
PCB Footprints & Symbols - High Linearity Si- and SiGeC-Transistors for use up to 6 GHz - Altium - v1.0 BFP760
PCB Footprints & Symbols - High Linearity Si- and SiGeC-Transistors for use up to 6 GHz - Cadence - v1.0 BFP760
PCB Footprints & Symbols - High Linearity Si- and SiGeC-Transistors for use up to 6 GHz - Eagle - v1.0 BFP760
PCB Footprints & Symbols - High Linearity Si- and SiGeC-Transistors for use up to 6 GHz - Mentor - v1.0 BFP760