The BFR840L3RHESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFR840L3RHESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in a very small thin leadless package, ideal for modules.
As Low Noise Amplifier (LNA) in:
Title | Size | Date | Version |
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BFR840L3RHESD,EN | 1.5 MB | 09 四月 2013 | 01_02 |
Title | Size | Date | Version |
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AN292 - BFR840L3RHESD SiGe:C Ultra Low Noise RF Transistor in Low Parts Count Wideband / Dual Band 2.4 – 5.8 GHz WLAN LNA Application | 924 KB | 19 二月 2013 | 01_00 |
AN281 - BFR840L3RHESD_Low-Part-Count@5-6GHz_WLAN | 740 KB | 23 三月 2012 | 01_00 |
AN290 | 613 KB | 10 六月 2012 | 01_00 |
AN339 - BFR840L3RHESD Low Noise Amplifier for 2.4 GHz - 2.5 GHz Wireless LAN Application | 836 KB | 06 八月 2014 | 01_00 |
Title | Size | Date | Version |
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Infineon-RF-Transistors-8th-Generation-PB-v01_00-CN;CN | 362 KB | 25 四月 2016 | 01_00 |
Infineon-RF-Transistors-8thGeneration-PB-v01_00-EN;EN | 289 KB | 01 四月 2016 | 01_00 |
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Next-Generation RF Transistors with Advanced Technology Boost Receiver | 251 KB | 02 四月 2013 |
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MCDS_2013-08-29_10-57-18_MA000997852_PG-TSLP-3-9.pdf | 23 KB | 31 十月 2013 | 01_00 |
Title | Size | Date | Version |
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PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 | 1 MB | 22 十月 2013 | 01_00 |
PCB Footprints and Symbols - BFR840L3RHESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO – v2.0.zip;EN | 243 KB | 08 五月 2015 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 | 139 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 | 27 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 | 176 KB | 22 十月 2013 | 01_00 |
Board | Family | Description | Status |
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BFP640ESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP740 BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP740ESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP740FESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP840ESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board. | on request |
BOARD BFP840FESD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP842ESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP843 BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | |
BFR840L3RHESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFR843EL3 BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP640 BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
Title | Size | Date | Version |
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Infineon-RFtransistor-Keysight-ADS-Design-Kit-SM-v02_00-EN;EN | 940 KB | 26 十月 2015 | 02_00 |
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-EN;EN | 21.4 MB | 11 十二月 2015 | 02_00 |
Infineon-AN281-BFR840L3RHESD-AWR-MWO-Apllication-Example-SM-v01_00-EN;EN | 219 KB | 26 十月 2015 | 01_00 |
Title | Size | Date | Version |
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BFR840L3RHESD | 461 KB | 25 六月 2012 |
Title | Size | Date | Version |
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PG-TSLP-3-9 | BFR840L3RHESDE6327XTSA1;EN | 522 KB | 11 四月 2016 | 01_00 |
Title | Size | Date | Version |
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PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 | 1 MB | 22 十月 2013 | 01_00 |
PCB Footprints and Symbols - BFR840L3RHESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO – v2.0.zip;EN | 243 KB | 08 五月 2015 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 | 139 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 | 27 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 | 176 KB | 22 十月 2013 | 01_00 |