BGA7H1BN6
BGA7H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 1805 MHz to 2690 Mhz and operates from1.5 V to 3.3 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode) and OFF-state can be enabled by powering down Vcc
LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules.
| BGA7H1BN6 | |
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| BGA7H1BN6E6327XTSA1 | |
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| coming soon | |
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| PG-TSNP-6 | |
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| yes | |
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| yes | |
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| yes | |
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| 15000 | |
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| TAPE & REEL | |
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| 1 | |
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| Sales Product Name | BGA7H1BN6 |
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| OPN | BGA7H1BN6E6327XTSA1 |
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| Product Status | coming soon |
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| Package Name | PG-TSNP-6 |
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| Completely lead free | yes |
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| Halogen free | yes |
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| RoHS compliant | yes |
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| Packing Size | 15000 |
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| Packing Type | TAPE & REEL |
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| Moisture Level | 1 |
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| Summary of Features:- Insertion power gain: 12.3 dB
- Low noise figure: 0.85 dB
- Low current consumption: 4.3 mA
- Insertion Loss in bypass mode: -3.1 dB
- Operating frequencies: 1805 - 2690 MHz
- Two-state control: Bypass- and High gain-Mode
- Supply voltage: 1.5 V to 3.3 V
- Digital on/off switch (1V logic high level)
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- RF output internally matched to 50 Ω
- Only 1 external SMD component necessary
- 2kV HBM ESD protection (including AI-pin)
- Pb-free (RoHS compliant) package
Summary of Features:- Insertion power gain: 12.3 dB
- Low noise figure: 0.85 dB
- Low current consumption: 4.3 mA
- Insertion Loss in bypass mode: -3.1 dB
- Operating frequencies: 1805 - 2690 MHz
- Two-state control: Bypass- and High gain-Mode
- Supply voltage: 1.5 V to 3.3 V
- Digital on/off switch (1V logic high level)
- Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
- B7HF Silicon Germanium technology
- RF output internally matched to 50 Ω
- Only 1 external SMD component necessary
- 2kV HBM ESD protection (including AI-pin)
- Pb-free (RoHS compliant) package
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Data Sheet
Package Data
