Parametric | BGT60 |
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Frequency | 57.0-64.0 GHz |
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Psat
(typ) | 14.0dBm |
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Rx Gain
(typ) | 22.0dB |
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NFDSB
(typ) | 7.0dB |
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ICCRx / Tx | 350/480 mA @3.3V |
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PN
( @100kHZ typ) | -81dBc/Hz |
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Power Detector
(-) | Integrated |
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Temperature Sensor | Integrated |
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Sales Product Name | BGT60 |
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OPN | BGT60E6327XTSA1 |
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Product Status | active and preferred |
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Package Name | PG-WFWLB-119 |
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Completely lead free | yes |
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Halogen free | yes |
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RoHS compliant | yes |
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Packing Size | 1000 |
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Packing Type | TAPE & REEL |
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Moisture Level | 1 |
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| Summary of Features:- Developed for telecommunication only
- Support FDD and TDD systems (in full duplex or half-duplex mode)
- Support modulation schemes: QPSK, QAM
- Support small cell backhaul (up to 1000m)
- Direct conversion I/Q transceiver
- IF bandwidth 1000MHz
- Differential RF/IF interface for lower loss and better isolation
- Integration of VCO (Voltage Controller Oscillator) signal generation
- PNssb (Phase Noise single side band) < -80dBc/Hz @ 100kHz offset
- Typ. 13dBm linear output power
- 7dB NF (Noise Figure)
- Integrated power detection function
- Integrated thermal sensor
- eWLB (embedded Wafer Level Ball Grid Array) packaged device
Benefits:- Packaged solution, easy to use and standard SMT flow for mounting on customer system
- Highly integrated RF transceiver requiring no external RF discretes, thereby simplifying the customer design and time-to-market
- Architecture of Direct Conversion Zero IF eases interface to latest modem/BB designs (no external filter)
- A transceiver approach with implemented BIST (B uilt-I n S elf-T est) on the chip to enable RF testing at Infineon production
- Family concept (common architecture, package, pinning) simplifies customer designs due to modular approach
|