IDC06S60CE

Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.

ParametricIDC06S60CE
TechnologythinQ!™ SiC diode chips
VDS  max600.0V
IF  max6.0A
I(FSM)  max49.0A
VF1.5V
IR  max80.0µA
Summary of Features:
  • Revolutionary semiconductor material - silicon carbide
  • Switching behaviour benchmark
  • No Reverse Recovery / no forward recovery
  • Temperature independent switching behaviour
  • Qualified according to JEDEC based on target applications
Target Applications:
  • SMPS
  • PFC
  • Snubber
Data Sheet
TitleSizeDateVersion
IDC06S60CE,EN59 KB05 九月 201201_02
EN IDC06S60CE