IDC51D120T6M
Emitter Controlled Diode is Infineon's unique Fast Recovery Diode technology. The ultrathin wafer and Fieldstop technology makes the Emitter Controlled Diode ideally suited for consumer and industry applications as it lowers the turn-on losses of the IGBT with soft recovery. The Emitter Controlled Diode is optimized for Infineon IGBT technology.
| Parametric | IDC51D120T6M |
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| Technology | Emitter Controlled Diode 4 Medium Power |
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| VDS
max | 1200.0V |
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| IF
max | 100.0A |
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| I(FSM)
max | 200.0A |
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| VF | 1.7V |
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| IR
max | 18.0µA |
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| Sales Product Name | IDC51D120T6M |
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| OPN | IDC51D120T6MX1SA3 |
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| Product Status | active and preferred |
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| Package Name | -- |
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| Completely lead free | yes |
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| Halogen free | yes |
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| RoHS compliant | yes |
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| Packing Size | 1 |
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| Packing Type | WAFER SAWN |
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| Summary of Features:- 1200V Emitter Controlled Diode 4 technology
- Soft, fast switching
- Low reverse recovery charge
- Small temperature coefficient
Target Applications: |
Data Sheet
