IDH16G65C5

CoolSiC™ Generation 5 represents Infineon’s leading edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).

ParametricIDH16G65C5
Budgetary Price €€/1k4.4
VDC  min650.0V
IF  max16.0A
VF1.5V
QC23.0nC
PackageTO-220 real 2pin
I(FSM)  max124.0A
IR0.85µA
Ptot  max129.0W
RthJC0.7K/W
Sales Product NameIDH16G65C5
OPNIDH16G65C5XKSA1
Product Statusactive and preferred
Package NamePG-TO220-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size500
Packing TypeTUBE
Moisture LevelNA
Summary of Features:
  • V br at 650V
  • Improved Figure of Merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating
Benefits:
  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability
Target Applications:
  • Telecom/Server SMPS
  • Solar
  • UPS
  • PC Power
  • LED/LCD TV
  • Motor Drives
  • HID Lighting
Data Sheet
TitleSizeDateVersion
IDH16G65C5,EN1.1 MB17 一月 201302_02
Product Brochure
TitleSizeDateVersion
CoolSiC™ technology；EN2.1 MB09 五月 201601_00
Product Overview
TitleSizeDateVersion
Selection Guide 600V 650V CoolSiC™ Schottky Diodes；EN2 MB14 三月 201401_00
Application Notes
TitleSizeDateVersion
Application Note Evaluation Board 2.5kW CCM 4pin 600V CoolMOS™ C7；EN1.4 MB16 十一月 201501_00
Application Note Evaluation Board 300W SMPS；EN3 MB09 二月 201601_02
Application Note CoolSiC™ Schottky Diodes Design Rules；EN791 KB16 六月 201401_00
Application Note PFC CCM Boost Converter Design Guide；EN2.2 MB19 十二月 201402_00
Product Brief
TitleSizeDateVersion
Product Brief 650V CoolSiC™ Schottky Diodes Generation 5；EN785 KB24 三月 201301_00
Article
TitleSizeDateVersion
New Sic Thin-Wafer Technology Paving the way of Schottky Diodes With Improved Performance and Reliability339 KB26 九月 2012
Article 600V 650V 1200V CoolSiC™ Schottky Diodes PEE Magazine；EN1.6 MB01 九月 201201_00
Matching Circuit Topologies and Power Semiconductors for Energy Storage in Photovoltaic Systems；EN376 KB05 九月 2014
Article CoolSiC™ Schottky Diodes Generation 5 Semiconductor Network - Korean；KO1.4 MB10 九月 201401_00
Additional Product Information
TitleSizeDateVersion
Advertisement 650V CoolSiC™ Schottky Diodes Generation 5；EN812 KB01 九月 201201_00
Press Release 650V CoolSiC™ Schottky Diodes Generation 5 German；DE119 KB01 九月 201201_00
Press Release 650V CoolSiC™ Schottky Diodes Generation 5 English；EN142 KB01 九月 201201_00
Application Brochure
TitleSizeDateVersion
Solutions for Solar Energy Systems；EN1.9 MB26 六月 201401_00
Application Brochure 3D Printer；EN340 KB23 十月 201501_00
Product Selection Guide
TitleSizeDateVersion
Selection Guide PFC Power Factor Correction；EN1.9 MB03 五月 201301_00
NEW! Power Management Selection Guide 2016；EN4.7 MB22 二月 201600_00
Product Catalogue
TitleSizeDateVersion
Short Form Catalog - May 2016；EN4.4 MB09 五月 201601_00
Whitepaper
TitleSizeDateVersion
White Paper CoolSiC™ Schottky Diodes Generation 5 600V 650V 1200V Reliability Considerations；EN601 KB01 三月 201301_00
White Paper 600V 650V 1200V CoolSiC™ Schottky Diodes Generation 5 SMPS Circuit Designs；EN105 KB07 五月 201301_00
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2016-03-20_10-34-22_MA000989360_PG-TO220-2-1.pdf；EN28 KB20 三月 201602_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Altium - v2.0752 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Cadence - v2.0470 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Eagle - v2.098 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Mentor - v2.0624 KB05 十一月 201302_00
Evaluation Boards
BoardFamilyDescriptionStatus
EVAL_2.5KW_CCM_4PINThis Evaluation board EVAL_2.5KW_CCM_4PIN, is designed for the customers to evaluate the performance of the TO247-4pin CoolMOSTM C7 family. The board is developed for the laboratories use only and does not serve for any commercial purpose!The aim of this Evaluation Board is to help the customers to get familiar with Infineon products and to evaluate different behavior of conventional 3pin devices compared to the high performance TO247-4pin CoolMOSTM devices within a PFC application.active and preferred
Simulation Models
TitleSizeDateVersion
Simulation Model SiC Diodes CoolSiC™ PSpice Generation 5 650V IDHxxG65C5；EN6 KB05 六月 201301_00
Package Data
TitleSizeDateVersion
PG-TO220-2-1 | IDH16G65C5XKSA1；EN524 KB11 四月 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Altium - v2.0752 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Cadence - v2.0470 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Eagle - v2.098 KB05 十一月 201302_00
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Mentor - v2.0624 KB05 十一月 201302_00
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PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Altium - v2.0 IDW40G120C5B
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Cadence - v2.0 IDW40G120C5B
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Eagle - v2.0 IDW40G120C5B
PCB Footprints & Symbols - Silicon Carbide Schottky Diodes - Mentor - v2.0 IDW40G120C5B
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