IDW40G65C5B

CoolSiC™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The new CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.

ParametricIDW40G65C5B
VDC  min650.0V
IF  max20.0A
VF1.5V
QC29.0nC
PackageTO-247
I(FSM)  max103.0A
IR1.1µA
Ptot  max112.0W
RthJC1.0K/W
Sales Product NameIDW40G65C5B
OPNIDW40G65C5BXKSA1
Product Statusactive and preferred
Package NamePG-TO247-3
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size240
Packing TypeTUBE
Summary of Features:
  • V br at 650V
  • Improved Figure of Merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating
Benefits:
  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability
Target Applications:
  • Telecom/Server SMPS
  • Solar
  • UPS
  • PC Power
  • LED/LCD TV
  • Motor Drives
  • HID Lighting
Data Sheet
TitleSizeDateVersion
Infineon-IDW40G65C5B-DS-v02_00-EN,EN701 KB30 六月 201502_00
Product Brochure
TitleSizeDateVersion
CoolSiC™ technology；EN2.1 MB09 五月 201601_00
Product Overview
TitleSizeDateVersion
Selection Guide 600V 650V CoolSiC™ Schottky Diodes；EN2 MB14 三月 201401_00
Application Notes
TitleSizeDateVersion
Application Note CoolSiC™ Schottky Diodes Design Rules；EN791 KB16 六月 201401_00
Application Note Evaluation Board 300W SMPS；EN3 MB09 二月 201601_02
Product Brief
TitleSizeDateVersion
Product Brief 650V CoolSiC™ Schottky Diodes Generation 5；EN785 KB24 三月 201301_00
Article
TitleSizeDateVersion
Article 600V 650V 1200V CoolSiC™ Schottky Diodes PEE Magazine；EN1.6 MB01 九月 201201_00
Article CoolSiC™ Schottky Diodes Generation 5 Semiconductor Network - Korean；KO1.4 MB10 九月 201401_00
New Sic Thin-Wafer Technology Paving the way of Schottky Diodes With Improved Performance and Reliability339 KB26 九月 2012
Application Brochure
TitleSizeDateVersion
Application Brochure 3D Printer；EN340 KB23 十月 201501_00
Product Selection Guide
TitleSizeDateVersion
Selection Guide PFC Power Factor Correction；EN1.9 MB03 五月 201301_00
NEW! Power Management Selection Guide 2016；EN4.7 MB22 二月 201600_00
Product Catalogue
TitleSizeDateVersion
Short Form Catalog - May 2016；EN4.4 MB09 五月 201601_00
Whitepaper
TitleSizeDateVersion
White Paper 600V 650V 1200V CoolSiC™ Schottky Diodes Generation 5 SMPS Circuit Designs；EN105 KB07 五月 201301_00
White Paper CoolSiC™ Schottky Diodes Generation 5 600V 650V 1200V Reliability Considerations；EN601 KB01 三月 201301_00
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2015-08-14_04-13-51_MA001225322_PG-TO247-3-41.pdf；EN28 KB14 八月 201501_00
Package Data
TitleSizeDateVersion
PG-TO247-3-41 | IDW40G65C5BXKSA1；EN471 KB11 四月 201601_00
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