IPB47N10S-33

ParametricIPB47N10S-33
RDS (on) (@10V)  max33.0mΩ
RDS (on)  max33.0mΩ
QG70.0nC
VDS  max100.0V
ID  max47.0A
RthJC  max0.85K/W
Ptot  max175.0W
IDpuls  max188.0A
VGS(th)  min  max2.1V  4.0V
Sales Product NameIPB47N10S-33
OPNIPB47N10S33ATMA1
Product Statusnot for new design
Package NamePG-TO263-3
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size1000
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • N-Channel
  • Enhancement mode
  • 175°C operating temperature
  • Avalanche rated
  • dv/dt rated
  • Green Package (lead free)
Benefits:
  • highest current capability 180A
  • low switching and conduction power losses for high thermal efficiency
  • robust packages with superior quality and reliability
  • optimized total gate charge enables smaller driver output stages
Target Applications:
  • 48V inverter
  • 48V DC/DC
  • HID lighting
Data Sheet
TitleSizeDateVersion
IPB 47N10S-33 Data Sheet,EN2.9 MB13 七月 201201_01
Product Brochure
TitleSizeDateVersion
Automotive MOSFETs Product BrochureEN3.5 MB26 五月 201501_00
Application Notes
TitleSizeDateVersion
Repetitive Avalanche of Automotive MOSFETs3.7 MB03 三月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure - Infineon Solutions for TransportationEN6.9 MB01 六月 201300_00
Product Selection Guide
TitleSizeDateVersion
Automotive Power Selection GuideEN10.6 MB19 一月 201601_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_07-38-39_MA000532842_PG-TO263-3-2.pdf24 KB31 十月 201301_00
EN IPP47N10S-33
EN IPP80P03P4-05
Repetitive Avalanche of Automotive MOSFETs IPP80P03P4-05
EN power-stage-3x3-and-5x6
EN TLE8203E
MCDS_2013-08-29_07-38-39_MA000532842_PG-TO263-3-2.pdf IPB47N10S-33