Parametric | IPC26N10NR |
---|
RDS (on) | 3.2mΩ |
---|
VGS(th)
min
max | 2.0V
4.0V |
---|
Technology | OptiMOS™ 2 |
---|
VDS | 100 V |
---|
Die Size
(X) | 4.36 mm |
---|
Die Size
(Y) | 6 mm |
---|
Die Size
(Area) | 26.16 mm² |
---|
Thickness | 250 |
---|
Mode | Enhancement |
---|
EAS/Avalanche Energy | 125.0mJ |
---|
Die Size
(-)
min
max | 4.36mm²
6.0mm² |
---|
Sales Product Name | IPC26N10NR |
---|
OPN | IPC26N10NRX1SA1 |
---|
Product Status | active and preferred |
---|
Package Name | -- |
---|
Completely lead free | yes |
---|
Halogen free | yes |
---|
RoHS compliant | yes |
---|
Packing Size | 1 |
---|
Packing Type | WAFER SAWN |
---|
| |
---|
| Summary of Features:- Outstanding switching performance
- Excellent R DS(on) and FOM
- Very low Q g and Q gd
Benefits:- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Environmentally friendly
Target Applications:- Motor control for 48V–80V systems (i.e. Domestic Vehicles, Forklift, Trucks)
- Synchronous rectification for AC-DC SMPS
- Isolated DC-DC converters (telecom and datacom systems)
- Or-ing switches and circuit breakers in 48V systems
- Notebook adapter
- Class D audio amplifiers
- Uninterruptible power supplies (UPS)
|