| Parametric | IPL65R660E6 |
|---|
| Budgetary Price €/1k | 0.62 |
|---|
| Package | ThinPAK 8x8 |
|---|
| VDS
max | 650.0V |
|---|
| RDS (on)
max | 660.0mΩ |
|---|
| Polarity | N |
|---|
| ID
max | 7.0A |
|---|
| Ptot
max | 63.0W |
|---|
| IDpuls
max | 16.0A |
|---|
| VGS(th)
min
max | 2.5V
3.5V |
|---|
| QG | 23.0nC |
|---|
| Rth | 2.0K/W |
|---|
| RthJC
max | 2.0K/W |
|---|
| RthJA
max | 65.0K/W |
|---|
| Operating Temperature
min | -40.0°C |
|---|
| Pin Count | 5.0Pins |
|---|
| Sales Product Name | IPL65R660E6 |
|---|
| OPN | IPL65R660E6AUMA1 |
|---|
| Product Status | active and preferred |
|---|
| Package Name | PG-VSON-4 |
|---|
| Completely lead free | no |
|---|
| Halogen free | yes |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 3000 |
|---|
| Packing Type | TAPE & REEL |
|---|
| Moisture Level | 3 |
|---|
| Description:- 600V CoolMOS™ E6 is replacement for 600V CoolMOS™ C3
- 650V CoolMOS™ E6 is replacement for 650V CoolMOS™ C3
Summary of Features:- Easy control of switching behavior
- Very high commutation ruggedness
- Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss)
- Easy to use
- Better light load efficiency compared to C3
- Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
- Better price performance in comparison to previous CoolMOS™ generations
- More efficient, more compact, lighter and cooler
Benefits:- Improved power density
- Improved reliability
- General purpose part can be used in both soft and hard switching topologies
- Better light load effciency
- Improved effciency in hard switching applications
- Improved ease of use
- Reduces possible ringing due to pcb layout and package parasitic effects
Target Applications:- Consumer
- Adapter
- eMobility
- PFC stages for Server & Telecom
- SMPS
- PC Power
- Solar
- Lighting
|
