IRF6613
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes.
| Parametric | IRF6613 |
|---|
| Package | DirectFET MT |
|---|
| VDS
max | 40.0V |
|---|
| RDS (on)
max | 3.4mΩ |
|---|
| RDS (on)
(@10V)
max | 3.4mΩ |
|---|
| RDS (on)
(@4.5V)
max | 4.1mΩ |
|---|
| Polarity | N |
|---|
| ID
(@ TA=70°C)
max | 18.0A |
|---|
| ID
(@ TA=25°C)
max | 23.0A |
|---|
| Ptot
(@ TA=25°C)
max | 2.8W |
|---|
| Ptot
max | 89.0W |
|---|
| QG | 42.0nC |
|---|
| Mounting | SMD |
|---|
| Qgd | 12.7nC |
|---|
| Tj
max | 150.0°C |
|---|
| VGS
max | 20.0V |
|---|
| Moisture Sensitivity Level | 1 |
|---|
| RthJC
max | 1.4K/W |
|---|
| Sales Product Name | IRF6613 |
|---|
| OPN | IRF6613TRPBF |
|---|
| Product Status | active and preferred |
|---|
| Package Name | DIRECTFET |
|---|
| Completely lead free | yes |
|---|
| Halogen free | yes |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 4800 |
|---|
| Packing Type | TAPE & REEL |
|---|
| Moisture Level | 1 |
|---|
|  |
Data Sheet
Product Selection Guide
Simulation Models
