IRF6710S2

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance.

ParametricIRF6710S2
PackageDirectFET S1
VDS  max25.0V
RDS (on) (@10V)  max5.9mΩ
RDS (on)  max5.9mΩ
RDS (on) (@4.5V)  max11.9mΩ
PolarityN
ID (@ TA=70°C)  max10.0A
ID (@ TA=25°C)  max12.0A
ID (@ TC=25°C)  max37.0A
Ptot (@ TA=25°C)  max1.8W
Ptot  max15.0W
QG8.8nC
MountingSMD
Qgd3.0nC
RthJC  max9.8K/W
Tj  max175.0°C
VGS  max20.0V
Moisture Sensitivity Level1
Sales Product NameIRF6710S2
OPNIRF6710S2TRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Optimized for Control FET Applications
  • Optimized for High Frequency Switching
  • Low Package Inductance
Target Applications:
  • MultiPhase ControlFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6710S2,EN302 KB22 二月 2008
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Saber Model - IRF6710S2EN2 KB22 二月 2008
Spice Model - IRF6710S2EN2 KB22 二月 2008
EN IRF6710S2
EN IDV20E65D1
EN IRF6710S2
EN IRF6710S2