IRF6727M
30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance.
Parametric | IRF6727M |
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Package | DirectFET MX |
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VDS
max | 30.0V |
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RDS (on)
(@10V)
max | 1.7mΩ |
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RDS (on)
max | 1.7mΩ |
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RDS (on)
(@4.5V)
max | 2.4mΩ |
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Polarity | N with Schottky |
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ID
(@ TA=70°C)
max | 26.0A |
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ID
(@ TA=25°C)
max | 32.0A |
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ID
(@ TC=25°C)
max | 180.0A |
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Ptot
(@ TA=25°C)
max | 2.8W |
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Ptot
max | 89.0W |
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QG | 49.0nC |
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Mounting | SMD |
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RthJC
max | 1.4K/W |
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Moisture Sensitivity Level | 1 |
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Qgd | 16.0nC |
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Tj
max | 150.0°C |
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VGS
max | 20.0V |
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Sales Product Name | IRF6727M |
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OPN | IRF6727MTRPBF |
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Product Status | active and preferred |
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Package Name | DIRECTFET |
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Completely lead free | no |
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Halogen free | yes |
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RoHS compliant | yes |
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Packing Size | 4800 |
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Packing Type | TAPE & REEL |
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Moisture Level | 1 |
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Data Sheet
Product Selection Guide
Simulation Models