IRF6810S

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 16 amperes optimized with low on resistance.

ParametricIRF6810S
PackageDirectFET S1
VDS  max25.0V
RDS (on)  max5.2mΩ
RDS (on) (@10V)  max5.2mΩ
RDS (on) (@4.5V)  max7.3mΩ
PolarityN
ID (@ TA=70°C)  max13.0A
ID (@ TA=25°C)  max16.0A
Ptot (@ TA=25°C)  max2.1W
Ptot  max20.0W
QG7.4nC
MountingSMD
Moisture Sensitivity Level1
Qgd2.7nC
Tj  max150.0°C
VGS  max16.0V
RthJC  max6.3K/W
Sales Product NameIRF6810S
OPNIRF6810STRPBF
Product Statusactive and preferred
Package NameDIRECTFET
Completely lead freeyes
Halogen freeno
RoHS compliantyes
Packing Size4800
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Optimized for Control FET Applications
  • Optimized for High Frequency Switching
  • Low Package Inductance
Target Applications:
  • MultiPhase ControlFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF6810S,EN277 KB08 十二月 2011
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Spice Model - IRF6810STRPBFEN2 KB08 十二月 2011
Saber Model - IRF6810STRPBFEN2 KB08 十二月 2011
EN IRF6810S
EN IDV20E65D1
EN IRF6810S
EN IRF6810S