IRF7105

25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF7105
PackageSO-8
VDS  max25.0V
RDS (on) (@10V)  max100.0mΩ
RDS (on)  max100.0mΩ
RDS (on) (@4.5V)  max160.0mΩ
RDS (on) (@10V)  max250.0mΩ
RDS (on)  max250.0mΩ
RDS (on) (@4.5V)  max400.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-2.3A
ID (@ TA=70°C)  max-1.8A
ID (@ TA=70°C)  max2.8A
ID (@ TA=25°C)  max3.5A
Ptot (@ TA=25°C)  max2.0W
QG9.4nC
QG10.0nC
Moisture Sensitivity Level1
Qgd (typ)2.8nC
Qgd (typ)3.1nC
Tj  max150.0°C
VGS  max20.0V
RthJA  max62.5K/W
Sales Product NameIRF7105
OPNIRF7105PBF
Product Statusnot for new design
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
OPNIRF7105TRPBF
Product Statusactive
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Low RDS(on)
  • Dynamic dv/dt Rating
  • Fast Switching
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF7105,EN302 KB10 十一月 2004
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
EN IRF7105
EN IDV20E65D1