PTFA091201F V4

High Power RF LDMOS FET, 120 W, 28 V, 920 – 960 MHz

ParametricPTFA091201F V4
Flange TypeEarless
MatchingI/O
Frequency Band  min  max920.0MHz  960.0MHz
P1dB120.0W
Supply Voltage28.0V
Pout50.0W
Gain19.0dB
Test SignalEDGE
Sales Product NamePTFA091201F V4
OPNPTFA091201FV4XWSA1
Product Statusdiscontinued
Package NameH-37248-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband internal matching
  • Typical EDGE performance - Average output power = 50 W - Gain = 19 dB - Efficiency = 44%
  • Typical CW performance - Output power at P1dB = 135 W - Gain = 18 dB - Efficiency = 64%
  • Capable of handling 10:1 VSWR @ 28 V, 120 W (CW) output power
  • Integrated ESD protection. Human Body Model, Class 2 (minimum)
  • Excellent thermal stability, low HCI drift
  • Pb-free and RoHS compliant
  • Package: H-37248-2, earless
Data Sheet
TitleSizeDateVersion
PTFA 091201EF DS,EN268 KB19 十一月 200703_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Reference Design
TitleSizeDateVersion
PTFA09120EF Gerber Files245 KB12 五月 201002_00
Package Data
TitleSizeDateVersion
H-37248-2-1 | PTFA091201FV4XWSA1EN344 KB11 四月 201601_00
EN PTFA091201F+V4
EN where-to-buy
PTFA09120EF Gerber Files PTFA091201F+V4
EN PTFA091201F+V4