PTFA092201F V4

High Power RF LDMOS FET, 220 W, 30 V, 920 – 960 MHz

ParametricPTFA092201F V4
Flange TypeEarless
MatchingI/O
Frequency Band  min  max920.0MHz  960.0MHz
P1dB250.0W
Supply Voltage30.0V
Pout55.0W
Gain18.5dB
Test SignalWCDMA
Sales Product NamePTFA092201F V4
OPNPTFA092201FV4XWSA1
Product Statusdiscontinued
Package NameH-37260-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size40
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion = –37 dBc - Adjacent channel power = –39 dBc
  • Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 250 W - Gain = 17.5 dB - Efficiency = 59%
  • Integrated ESD protection. Human Body Model, Class 2 (minimum)
  • Excellent thermal stability, low HCI drift
  • Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power
  • Pb-free, RoHS-compliant
  • Package: H-37260-2, earless
Data Sheet
TitleSizeDateVersion
PTFA 092201EF - V4,EN374 KB25 三月 200903_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Reference Design
TitleSizeDateVersion
PTFA 092201EF Reference design PCB files103 KB17 七月 201001_00
Package Data
TitleSizeDateVersion
H-37260-2-1 | PTFA092201FV4XWSA1EN344 KB11 四月 201601_00
EN PTFA092201F+V4
EN where-to-buy
PTFA 092201EF Reference design PCB files PTFA092201F+V4
EN PTFA092201F+V4