PTFA212001F V4

High Power RF LDMOS FETs, 200 W, 30 V, 2110 – 2170 MHz

ParametricPTFA212001F V4
Flange TypeEarless
MatchingI/O
Frequency Band  min  max2110.0MHz  2170.0MHz
P1dB200.0W
Supply Voltage30.0V
Pout50.0W
Gain15.8dB
Test SignalWCDMA
Sales Product NamePTFA212001F V4
OPNPTFA212001FV4XWSA1
Product Statusdiscontinued
Package NameH-37260-2
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size40
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband internal matching
  • Typical two-carrier WCDMA performance at 2140 MHz, 30 V - Average output power = 50 W - Linear Gain = 15.8 dB - Efficiency = 28% - Intermodulation distortion = –35.5 dBc - Adjacent channel power = –40 dBc
  • Typical single-carrier WCDMA performance at 2140 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB - Average output power = 70 W - Linear Gain = 15.5 dB - Efficiency = 34% - Adjacent channel power = –37 dBc
  • Typical CW performance, 2170 MHz, 30V - Output power at P–1dB = 220 W - Efficiency = 54%
  • Integrated ESD protection: Human Body Model, Class 2 (minimum)
  • Excellent thermal stability, low HCI drift
  • Capable of handling 5:1 VSWR @ 30 V, 200 W (CW) output power
  • Package : H-37260-2, earless
Data Sheet
TitleSizeDateVersion
PTFA 212001EF - V4,EN399 KB25 三月 200905_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Reference Design
TitleSizeDateVersion
PTFA 212001EF RD133 KB31 十月 200601_01
Package Data
TitleSizeDateVersion
H-37260-2-1 | PTFA212001FV4XWSA1EN344 KB11 四月 201601_00
EN PTFA212001F+V4
EN where-to-buy
PTFA 212001EF RD PTFA212001F+V4
EN PTFA212001F+V4