PTFB082817FH V1

High Power RF LDMOS FET, 280 W, 30 V, 791 – 821 MHz

ParametricPTFB082817FH V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max791.0MHz  821.0MHz
P1dB250.0W
Supply Voltage28.0V
Pout100.0W
Gain19.0dB
Test SignalWCDMA
Sales Product NamePTFB082817FH V1
OPNPTFB082817FHV1XWSA1
Product Statusdiscontinued
Package NameH-34288-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband internal matching
  • Enhanced for use in DPD error correction systems
  • Typical single-carrier WCDMA performance at 821 MHz, 30 V - Average output power = 50 W - Linear Gain = 19 dB - Efficiency = 35% - Adjacent channel power = –35 dBc
  • Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
  • Integrated ESD protection
  • Capable of handling 10:1 VSWR @ 30 V, 280 W (CW) output power
  • Pb-Free and RoHS compliant
  • Package: H-34288-4/2, earless
Data Sheet
TitleSizeDateVersion
PTFB 082817FH DS,EN545 KB08 三月 201102_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Package Data
TitleSizeDateVersion
H-34288-4/2-1 | PTFB082817FHV1XWSA1EN345 KB11 四月 201601_00
Development Tools
TitleSizeDateVersion
Reference Design files for PTFB 082817FH V1154 KB07 十月 201001_01
EN PTFB082817FH+V1
EN where-to-buy
EN PTFB082817FH+V1
Reference Design files for PTFB 082817FH V1 PTFB082817FH+V1