PTFB093608FV V3

High Power RF LDMOS FET, 360 W, 28 V, 920 – 960 MHz

ParametricPTFB093608FV V3
Flange TypeEarless
MatchingI/O
Frequency Band  min  max920.0MHz  960.0MHz
P1dB360.0W
Supply Voltage28.0V
Pout160.0W
Gain19.0dB
Test SignalWCDMA
Sales Product NamePTFB093608FV V3
OPN
Product Statusactive and preferred
Package NameH-37275G-6
Completely lead freeno
Halogen freeyes
RoHS compliantyes
Packing Size
Packing Type
Summary of Features:
  • Broadband internal matching
  • Enhanced for use in DPD error correction systems and Doherty applications
  • Wide video bandwidth
  • Typical two-carrier WCDMA performance, 960 MHz, 28 V Average output power = 160 W Gain = 19 dB Efficiency = 40% Integrated ESD protection
  • Low thermal resistance
  • Capable of handling 10:1 VSWR @ 32 V, 960 MHz, +3 dB input overdrive = 500 W (CW) output power
  • Pb-Free and RoHS compliant
  • Package: H-34275G-6/2, earless
Data Sheet
TitleSizeDateVersion
Infineon-PTFB093608FV-DS-v05_00-EN,EN256 KB06 十月 201505_00
Development Tools
TitleSizeDateVersion
PTFB093608FSV RD308 KB01 四月 201101_01
EN PTFB093608FV+V3
PTFB093608FSV RD PTFB093608SV+V2+R250