PTFB182503EL V1

High Power RF LDMOS FET, 240 W, 1805 – 1880 MHz

ParametricPTFB182503EL V1
Flange TypeBolt Down
MatchingI/O
Frequency Band  min  max1805.0MHz  1880.0MHz
P1dB240.0W
Supply Voltage30.0V
Pout50.0W
Gain19.0dB
Test SignalWCDMA
Sales Product NamePTFB182503EL V1
OPNPTFB182503ELV1XWSA1
Product Statusdiscontinued
Package NameH-33288-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size40
Packing TypeBLISTER TRAY
OPNPTFB182503ELV1R0XTMA1
Product Statusactive and preferred
Package NameH-33288-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
Summary of Features:
  • Broadband input and output matching
  • Enhanced for use in DPD error correction systems
  • Typical two-carrier WCDMA performance at 1880 MHz, 30 V, - Average output power = 50 W - Linear Gain = 19 dB - Efficiency = 28% - IMD = -35 dBc
  • Typical CW performance at 1880 MHz, 30 V, - Output power at P1dB = 240 W - Efficiency = 55%
  • Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
  • Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power
  • Integrated ESD protection. Human Body Model, Class 2 (minimum)
  • Pb-free and RoHS compliant
  • Package: H-33288-6, bolt-down
Data Sheet
TitleSizeDateVersion
PTFB 182503EFL V1 V2 DS,EN571 KB06 八月 201307_02
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Package Data
TitleSizeDateVersion
H-33288-6-1 | PTFB182503ELV1XWSA1EN345 KB11 四月 201601_00
Development Tools
TitleSizeDateVersion
PTFB182503EFL RD120 KB12 八月 201002_02
EN PTFB182503FL+V2
EN where-to-buy
EN PTFB182503EL+V1
PTFB182503EFL RD PTFB182503FL+V2