PTFB183408SV V2

High Power RF LDMOS FET 340 W, 30 V, 1805 – 1880 MHz

ParametricPTFB183408SV V2
Flange TypeSurface Mount
MatchingI/O
Frequency Band  min  max1805.0MHz  1880.0MHz
P1dB340.0W
Supply Voltage30.0V
Pout80.0W
Gain17.0dB
Test SignalWCDMA
Sales Product NamePTFB183408SV V2
OPNPTFB183408SVV2XWSA1
Product Statusnot for new design
Package NameH-37275G-6
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband input and output matching
  • Wide video bandwidth
  • Typical single-carrier WCDMA performance at 1880 MHz, 30 V, 5.5 dB PAR @ 0.01% CCDR probability - Output power = 125 W - Efficiency = 31% - Gain = 17 dB - ACPR @ 5 MHz= –37 dBc
  • Increased negative gate-source voltage range for improved performance in Doherty amplifiers
  • Capable of handling 10:1 VSWR @ 30 V, 300 W (CW) output power
  • Integrated ESD protection
  • Excellent thermal stability
  • Pb-free and RoHS-compliant
  • Package: H-34275G-6/2, gull wing
Data Sheet
TitleSizeDateVersion
PTFB 183408SV Data Sheet,EN241 KB07 三月 201403_00
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Package Data
TitleSizeDateVersion
H-37275G-6/2-1 | PTFB183408SVV2XWSA1EN345 KB11 四月 201601_00
Development Tools
TitleSizeDateVersion
PTFB183408SV RD132 KB07 六月 201202_01
EN PTFB183408SV+V2
EN where-to-buy
EN PTFB183408SV+V2
PTFB183408SV RD PTFB183408SV+V2