PTFB192503FL V2

High Power RF LDMOS FET, 240 W, 30 V, 1930 – 1990 MHz

ParametricPTFB192503FL V2
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1930.0MHz  1990.0MHz
P1dB240.0W
Supply Voltage30.0V
Pout50.0W
Gain19.0dB
Test SignalWCDMA
Sales Product NamePTFB192503FL V2
OPNPTFB192503FLV2R0XTMA1
Product Statusactive and preferred
Package NameH-34288-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPTFB192503FLV2XWSA1
Product Statusdiscontinued
Package NameH-34288-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size35
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband input and output matching
  • Enhanced for use in DPD error correction systems
  • Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 50 W - Linear Gain = 19 dB - Efficiency = 28% - IMD = -35 dBc
  • Typical CW performance, 1990 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 55%
  • Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers
  • Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power
  • Integrated ESD protection. Human Body Model, Class 2 (minimum)
  • Pb-free and RoHS compliant
  • Package: H-34288-4/2, earless
Data Sheet
TitleSizeDateVersion
PTFB 192503EFL V1 V2 DS,EN546 KB13 六月 201609_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Package Data
TitleSizeDateVersion
H-34288-4/2-1 | PTFB192503FLV2XWSA1EN344 KB11 四月 201601_00
Development Tools
TitleSizeDateVersion
PTFB192503EFL RD118 KB20 八月 201002_01
EN PTFB192503FL+V2
EN where-to-buy
EN PTFB192503FL+V2
PTFB192503EFL RD PTFB192503FL+V2