PTVA101K02EV V1

High Power RF LDMOS FET, 1000 W, 50 V, 1030 / 1090 MHz

ParametricPTVA101K02EV V1
Flange TypeBolt Down
MatchingInput
Frequency Band  min  max1030.0MHz  1090.0MHz
P1dB950.0W
Supply Voltage50.0V
Gain17.5dB
Test SignalPulsed
Sales Product NamePTVA101K02EV V1
OPNPTVA101K02EVV1R0XTMA1
Product Statusactive and preferred
Package NameH-36275-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPTVA101K02EVV1XWSA1
Product Statusdiscontinued
Package NameH-36275-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size30
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband input matching
  • High gain and efficiency
  • Integrated ESD protection
  • Low thermal resistance
  • Excellent ruggedness
  • Pb-free and RoHS compliant
  • Capable of withstanding a 10:1 load mismatch (all phase angles) at 1000 W under MODE–S pulse condition, (32μS ON / 18μS OFF) X 80, LTDF = 6.4%.
  • Package: H-36275-4, bolt-down
Data Sheet
TitleSizeDateVersion
PTVA 101K02EV DS,EN699 KB19 四月 201602_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Product Brief
TitleSizeDateVersion
Infineon RF Power 50V TransistorsEN330 KB25 五月 201603_00
Reference Design
TitleSizeDateVersion
PTVA 101K02EV RD185 KB31 五月 201302_00
Package Data
TitleSizeDateVersion
H-36275-4-1 | PTVA101K02EVV1XWSA1EN344 KB11 四月 201601_00
EN PTVA101K02EV+V1
EN where-to-buy
EN EVAL+ISO2H823V25
PTVA 101K02EV RD PTVA101K02EV+V1
EN PTVA101K02EV+V1