PXAC182002FC V1

Thermally-Enhanced High Power RF LDMOS FET, 180 W, 28 V, 1805 – 1880 MHz

ParametricPXAC182002FC V1
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1805.0MHz  1880.0MHz
P1dB180.0W
Supply Voltage28.0V
Pout28.2W
Gain16.7dB
Test SignalWCDMA
Sales Product NamePXAC182002FC V1
OPNPXAC182002FCV1R0XTMA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeTAPE & REEL
OPNPXAC182002FCV1XWSA1
Product Statusactive and preferred
Package NameH-37248-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size50
Packing TypeBLISTER TRAY
Summary of Features:
  • Broadband internal input and output matching
  • Typical pulsed CW performance, 1880 MHz, 28 V, combined outputs - Output power at P 3dB = 194 W - Efficiency = 64% - Gain = 14 dB
  • Capable of handling 10:1 VSWR @28 V, 180 W (CW) output power
  • Integrated ESD protection
  • Low thermal resistance
  • Pb-free and RoHS compliant
  • Package : H-37248-4, earless
Data Sheet
TitleSizeDateVersion
Infineon-PXAC182002FC-DS-v02_01-EN,EN620 KB05 六月 201502_02
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Reference Design
TitleSizeDateVersion
PXAC182002FC RDEN235 KB22 四月 201501_00
Package Data
TitleSizeDateVersion
H-37248-4-1 | PXAC182002FCV1XWSA1EN344 KB11 四月 201601_00
H-37248-4-1 | PXAC182002FCV1R0XTMA1EN344 KB11 四月 201601_00
EN PXAC182002FC+V1
EN where-to-buy
EN PXAC182002FC+V1
EN PXAC182002FC+V1
EN PXAC182002FC+V1