PXFC192207NF V1 R500

High Power RF LDMOS FET, 220 W, 28 V, 1805 – 1990 MHz

ParametricPXFC192207NF V1 R500
Flange TypeEarless
MatchingI/O
Frequency Band  min  max1805.0MHz  1990.0MHz
P1dB220.0W
Supply Voltage28.0V
Pout50.0W
Gain18.7dB
Test SignalWCDMA
Sales Product NamePXFC192207NF V1 R500
OPNPXFC192207NFV1R500XUMA1
Product Statusactive and preferred
Package NamePG-HBSOF-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size500
Packing TypeTAPE & REEL
Moisture Level3
Summary of Features:
  • Broadband internal input and output matching
  • Typical Pulsed CW performance, 1880 MHz, 28 V, 10 μs pulse width, 10% duty cycle, single side - Output power at P1dB = 220 W - Efficiency = 56% - Gain = 19 dB
  • Typical single-carrier WCDMA performance, 1880 MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test Model 1 with 64DPCH - Output power = 50 W avg - Efficiency = 34% - Gain = 20 dB - ACPR = –33 dBc @ 5 MHz
  • Capable of handling 10:1 VSWR @28 V, 220 W (CW) output power
  • Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
  • Low thermal resistance
  • Package: PG-HBSOF-4, plastic
Data Sheet
TitleSizeDateVersion
PXFC192207NF DS,EN586 KB18 十一月 201402_01
Product Brochure
TitleSizeDateVersion
Infineon-RFP Product Selection GuideEN718 KB24 五月 201505_00
Application Notes
TitleSizeDateVersion
Circuit Assembly with Packages PG-HBSOF-4 and PG-HB1SOF-4EN861 KB16 十月 201401_00
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2015-01-23_13-57-00_MA001318352_PG-HBSOF-4-1.pdfEN28 KB23 一月 201501_00
Reference Design
TitleSizeDateVersion
PXFC192207NF RD61 KB08 九月 201401_00
Package Data
TitleSizeDateVersion
PG-HBSOF-4-1 | PXFC192207NFV1R500XUMA1EN343 KB11 四月 201601_00
EN PXFC192207NF+V1+R500
EN where-to-buy
EN PXFC192207NF+V1+R500
EN PXFC192207NF+V1+R500
PXFC192207NF RD PXFC192207NF+V1+R500
EN PXFC192207NF+V1+R500