| Parametric | SIGC185T170R2C |
|---|
| VCE
max | 1700.0V |
|---|
| IC
max | 100.0A |
|---|
| VCE(sat)
max | 3.2V |
|---|
| VGE(th)
min
max | 4.5V
6.5V |
|---|
| tr | 100.0ns |
|---|
| tf | 30.0ns |
|---|
| Operating Temperature
min
max | -55.0°C
150.0°C |
|---|
| ICpuls
max | 300.0A |
|---|
| VDS
max | 1700.0V |
|---|
| Package | sawn on foil |
|---|
| td(off) | 800.0ns |
|---|
| td(on) | 100.0ns |
|---|
| Sales Product Name | SIGC185T170R2C |
|---|
| OPN | SIGC185T170R2CX1SA1 |
|---|
| Product Status | active and preferred |
|---|
| Package Name | -- |
|---|
| Completely lead free | yes |
|---|
| Halogen free | yes |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 1 |
|---|
| Packing Type | WAFER SAWN |
|---|
| |
|---|
| Summary of Features:- Positive temperature coefficient
- Easy paralleling
- High robustness
Target Applications:- Medium / high power drives
 功能框图 |
