Silicon Power Diode

Ultra Soft Diodes
650V 快速 1 和快速 2 二极管

The Silicon Power Rapid Diode family complements Infineon’s existing high power 600V/650V diode portfolio by filling the gap between SiC diodes and previously released emitter-controlled diodes. They represent a perfect cost/performance balance and target high efficiency applications switching between 18kHz and 100kHz. Rapid 1 and Rapid 2 diodes are optimized to have excellent compatibility with CoolMOS™ and high speed IGBT (Insulated Gate Bipolar Transistor) such as the TRENCHSTOP™ 5 and HighSpeed 3.

Application Brief
TitleSizeDateVersion
Application Brief System Solution Battery Powered Motor DrivesEN712 KB27 二月 201401_00
Application Notes
TitleSizeDateVersion
Infineon-Application Note Rapid 1 and Rapid 2 Diodes-AN-v01_00-ENEN660 KB24 十月 201401_00
Article
TitleSizeDateVersion
Article - Rapid 1 and 2 Diodes - PSD March 2013EN568 KB14 三月 2013
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Selection Guide Rapid 1 and Rapid 2 DiodesEN2 MB24 十月 201401_00
Application Brochure
TitleSizeDateVersion
Application Brochure 3D PrinterEN340 KB23 十月 201501_00
Product Brief
TitleSizeDateVersion
Product Brief Rapid 1 and Rapid 2 DiodesEN386 KB14 三月 201302_00
Additional Product Information
TitleSizeDateVersion
Infineon-Advertisment Rapid 1 and Rapid 2 Diodes-AP-v01_00-ENEN879 KB24 十月 201401_00
Simulation Models
TitleSizeDateVersion
Simulation Model PSpice Silicon Power Diode 1200VEN4 KB26 七月 200701_00
Simulation Model - PSpice Rapid Diodes 2EN3 KB23 六月 201501_00
Simulation Model - PSpice Rapid Diodes 1EN3 KB23 六月 201501_00
Simulation Model PSpice Silicon Power Diode 600VEN3 KB26 七月 200701_00
EN IDV20E65D1
EN IDV20E65D1
EN IDV20E65D1
EN IDV20E65D1
EN IDV20E65D1
EN silicon-power-diode
EN IDV20E65D1
EN IDV20E65D1
EN IDP30E120
EN IDV20E65D1
EN IDV20E65D1
EN IDW50E60