Ultra Soft Diodes | 650V 快速 1 和快速 2 二极管 |
The Silicon Power Rapid Diode family complements Infineon’s existing high power 600V/650V diode portfolio by filling the gap between SiC diodes and previously released emitter-controlled diodes. They represent a perfect cost/performance balance and target high efficiency applications switching between 18kHz and 100kHz. Rapid 1 and Rapid 2 diodes are optimized to have excellent compatibility with CoolMOS™ and high speed IGBT (Insulated Gate Bipolar Transistor) such as the TRENCHSTOP™ 5 and HighSpeed 3.
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Application Brief System Solution Battery Powered Motor Drives;EN | 712 KB | 27 二月 2014 | 01_00 |
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Infineon-Application Note Rapid 1 and Rapid 2 Diodes-AN-v01_00-EN;EN | 660 KB | 24 十月 2014 | 01_00 |
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Article - Rapid 1 and 2 Diodes - PSD March 2013;EN | 568 KB | 14 三月 2013 |
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NEW! Power Management Selection Guide 2016;EN | 4.7 MB | 22 二月 2016 | 00_00 |
Selection Guide Rapid 1 and Rapid 2 Diodes;EN | 2 MB | 24 十月 2014 | 01_00 |
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Application Brochure 3D Printer;EN | 340 KB | 23 十月 2015 | 01_00 |
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Product Brief Rapid 1 and Rapid 2 Diodes;EN | 386 KB | 14 三月 2013 | 02_00 |
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Infineon-Advertisment Rapid 1 and Rapid 2 Diodes-AP-v01_00-EN;EN | 879 KB | 24 十月 2014 | 01_00 |
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Simulation Model PSpice Silicon Power Diode 1200V;EN | 4 KB | 26 七月 2007 | 01_00 |
Simulation Model - PSpice Rapid Diodes 2;EN | 3 KB | 23 六月 2015 | 01_00 |
Simulation Model - PSpice Rapid Diodes 1;EN | 3 KB | 23 六月 2015 | 01_00 |
Simulation Model PSpice Silicon Power Diode 600V;EN | 3 KB | 26 七月 2007 | 01_00 |