BGS8M4UK: SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE
The BGS8M4UK is a Low Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a Wafer Level Chip-Scale Package (WLCSP). The BGS8M4UK requires one external matching inductor.
The BGS8M4UK delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in Frequency Division Duplex (FDD) systems. When receive signal strength is sufficient, the BGS8M4UK can be switched off to operate in bypass mode at a 1 μA current, to lower power consumption. The BGS8M4UK requires only one external matching inductor.
The BGS8M4UK is optimized for 1805 MHz to 2200 MHz.
数据手册 (1)
应用说明 (1)
订购信息
型号 | 状态 | Package version | @VCC [min] (V) | @VCC [max] (V) | @ICC [typ] (mA) | Gp [typ] (dB) | NF [typ] (dB) | Pi(1dB) [min] (dBm) | Pi(1dB) [typ] (dBm) | IP3i [min] (dBm) | IP3i [typ] (dBm) | @VCC (V) | @f (MHz) |
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BGS8M4UK/S | Introduction Pending | | 1.5 | 3.1 | | 16.6 | 0.8 | | | | | | |
BGS8M4UK | Active | SOT1445-1 | 1.5 | 3.1 | | 16.6 | 0.8 | | | | | | |
封装环保信息
产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | MSL | MSL LF |
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BGS8M4UK/S | | | | | Development | BGS8M4UK/SZ
(9340 709 97019) | Standard Marking | | | | | |
BGS8M4UK | | | | | Active | BGS8M4UKZ
(9340 699 26019) | Standard Marking | BGS8M4UK | | Always Pb-free | 1 | 1 |