PBSS4160PANPS: 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS.
sot1118d_3d
数据手册 (1)
| 名称/描述 | Modified Date |
|---|---|
| 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor (REV 1.0) PDF (331.0 kB) PBSS4160PANPS [English] | 11 Feb 2015 |
封装信息 (1)
| 名称/描述 | Modified Date |
|---|---|
| DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads; 6 terminals; body 2 x 2 x... (REV 1.0) PDF (201.0 kB) SOT1118D [English] | 08 Feb 2016 |
订购信息
| 型号 | 状态 | Package version | Package name | 大小 (mm) | Transistor polarity | transistor polarity | Polarity | number of transistors | Ptot [max] (mW) | ICM [max] (A) | VCEO [max] (V) | IC [max] (A) | VCEsat [max] (NPN) (mV) | hFE [typ] | VCEsat [max] (PNP) (mV) | fT [min] (MHz) | RCEsat@IC [max]; IC/IB =10 [typ] (mΩ) | RCEsat [typ] (mΩ) | hFE [min] | VCEsat [max] (mV) | fT [typ] (MHz) | RCEsat [max] (mΩ) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS4160PANPS | Active | SOT1118D | DFN2020D-6 | 2 x 2 x 0.65 | NPN/PNP | NPN/PNP | 2 | 370 | 1.5 | 60 | 1 | 220 | 430 | -340 | 90 | 359.99999999999999 | 290 | 240 | 175 | 360 |
封装环保信息
| 产品编号 | 封装说明 | Outline Version | 回流/波峰焊接 | 包装 | 产品状态 | 部件编号订购码 (12NC) | Marking | 化学成分 | RoHS / 无铅 / RHF | 无铅转换日期 | EFR | IFR(FIT) | MTBF（小时） | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PBSS4160PANPS | | SOT1118D | Reel 7" Q1/T1 | Active | PBSS4160PANPSX (9340 690 01115) | 3G |    | Always Pb-free | 153.0 | 0.71 | 1.41E9 | 1 | 1 |
- 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor PBSS4160PANPS
- DFN2020D-6: plastic, thermally enhanced ultra thin and small outline package; no leads; 6 terminals; body 2 x 2 x... PBSS5260PAPS
- DOUBLE_LOW_VCESAT_BISS_TRANSISTORS_IN_DFN2020_6
