2N6667: 10 A, 60 V PNP Darlington Bipolar Power Transistor
The 8 A, 60 V PNP Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low speed switching applications.
特性- High DC Current Gain hFE = 3500 (Typ) @ IC = 4 Adc
- Collector-Emitter Sustaining Voltage @ 200 mAdc VCEO(sus) = 60 Vdc (Min) 2N6667 VCEO(sus) = 80 Vdc (Min) - 2N6668
- Low Collector-Emitter Saturation Voltage VCE(sat) = 2 Vdc (Max) @ IC = 5 A
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors
- TO-220AB Compact Package
- Complementary to 2N6387, 2N6388 Figure 1. Darlington Schematic
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封装
仿真模型 (4)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| 2N6667G | Active | Pb-free | TO-220-3 | 221A-09 | NA | Tube | 50 | $0.4533 |
| 2N6667 | Last Shipments | | TO-220-3 | 221A-09 | NA | Tube | 50 | |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | VCE(sat) Max (V) | hFE Min (k) | hFE Max (k) | fT Min (MHz) |
|---|
| 2N6667G | PNP | 10 | 60 | 2 | 1 | 20 | 20 |
