MMBT6517L: High Voltage NPN Bipolar Transistor
This High Voltage NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SOT-23 package, which is designed for low power surface mount applications.
特性- Low rDS(on) Provides Higher Efficiency and Extends Battery Life
- Miniature SOT-23 Surface Mount Package Saves Board Space
- Pb-Free Packages are Available
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仿真模型 (4)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| SOT-23 | 318-08 (62.5kB) | AP |
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 具体说明 | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MMBT6517LT1G | Active | AEC Qualified
Pb-free
Halide free | High Voltage NPN Bipolar Transistor | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.1736 |
| MMBT6517LT3G | Active | Pb-free
Halide free | High Voltage NPN Bipolar Transistor | SOT-23-3 | 318-08 | 1 | Tape and Reel | 10000 | $0.1736 |
| NSVMMBT6517LT1G | Active | AEC Qualified
PPAP Capable
Pb-free
Halide free | High Voltage NPN Bipolar Transistor | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | $0.1909 |
| MMBT6517LT1 | Last Shipments | | High Voltage NPN Bipolar Transistor | SOT-23-3 | 318-08 | 1 | Tape and Reel | 3000 | |
订购产品技术参数
| Product | Polarity | IC Continuous (A) | V(BR)CEO Min (V) | hFE Min | hFE Max | fT Min (MHz) | PTM Max (W) |
|---|
| MMBT6517LT1G | NPN | 0.1 | 350 | 30 | 200 | 40 | 0.225 |
| MMBT6517LT3G | NPN | 0.1 | 350 | 30 | 200 | 40 | 0.225 |
| NSVMMBT6517LT1G | NPN | 0.1 | 350 | 30 | 200 | 40 | 0.225 |
