NCP5111: Power MOSFET / IGBT Driver, Single Input, Half-Bridge
The NCP5111 is a High Voltage Power gate Driver providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration.It uses the bootstrap technique to insure a proper drive of the High-side power switch.
特性- High Voltage Range: Up to 600V
- dV/dt Immunity ±50 V/ns
- Gate Drive Supply Range from 10 V to 20 V
- High and Low Drive Outputs
- Output Source / Sink Current Capability 250 mA / 500 mA
- 3.3 V and 5 V Input Logic Compatible
- Up to Vcc Swing on Input Pins
- Matched Propagation Delays Between Both Channels
- One Input with Internal Fixed Dead Time (650 ns)
- Under Vcc LockOut (UVLO) for Both Channels
- Pin to Pin Compatible with Industry Standards
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应用- Half Bridge Power Converters
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应用注释 (1)
数据表 (1)
仿真模型 (1)
封装图纸 (2)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NCP5111DR2G | Active | Pb-free
Halide free | SOIC-8 | 751-07 | 1 | Tape and Reel | 2500 | $0.32 |
| NCP5111PG | Active | Pb-free
Halide free | PDIP-8 | 626-05 | 1 | Tube | 50 | $0.768 |
订购产品技术参数
| Product | Type | Number of Drivers | Vin Max (V) | VCC Max (V) | Drive Source/Sink Typ (mA) | Rise Time (ns) | Fall Time (ns) | tp Max (ns) |
|---|
| NCP5111DR2G | MOSFET or IGBT | 2 | 600 | 23 | 250 / 500 | 85 | 35 | 170 |
| NCP5111PG | MOSFET or IGBT | 2 | 600 | 23 | 250 / 500 | 85 | 35 | 170 |
