NGTB40N120S3: 1200V, 40A IGBT Low VF FSIII
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Ultra Field Stop Trench construction, and provides
superior performance in demanding switching applications, offering
low switching losses. The IGBT is well suited for applications that
require fast switching IGBT with low VF diodes, e.g. phase−shifted full
bridge, etc. Incorporated into the device is a free wheeling diode with a
low forward voltage.
特性- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Low VF Reverse Diode
- Optimized for High Speed Switching
- These are Pb−Free Devices
|
应用- Welding
- Uninterruptible Power Inverter Supplies (UPS)
- Motor Control
| 终端产品 |
数据表 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 | 340AL (32.3kB) | C |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB40N120S3WG | Active | Pb-free
Halide free | TO-247 | 340AL | NA | Tube | 30 | $3.0933 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB40N120S3WG | 1200 | 40 | 1.7 | 2 | 1.1 | 2.2 | 256 | 19 | 212 | | | 454 | Yes |
