NGTB75N65FL2WA: 650 V Field Stop II IGBT, 75 A
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
特性- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Improved Gate Control Lowers Switching Losses
- Separate Emitter Drive Pin
- TO-247-4L for Minimal Eon Losses
- Optimized for High Speed Switching
- These are Pb-Free Devices
|
应用- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Neutral Point Clamp Topology
| 终端产品 |
数据表 (1)
封装图纸 (1)
| Document Title | Document ID/Size | Revision |
|---|
| TO-247 4-Lead | 340AR (32.0kB) | O |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTB75N65FL2WAG | Active | Pb-free
Halide free | TO-247 4-Lead | 340AR | NA | Tube | 30 | $2.08 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTB75N65FL2WAG | 650 | 75 | 1.7 | 2.3 | 1.2 | 0.61 | 90 | 7 | 310 | | | | Yes |
