NGTD30T120F2: IGBT 1200V 40A FS2 bare die
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss.
特性- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Optimized for High Speed Switching
- 10 µs Short Circuit Capability
- These are Pb−Free Devices
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应用- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Welding
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数据表 (1)
| Document Title | Document ID/Size | Revision | Revision Date |
|---|
| IGBT Die | NGTD30T120F2WP/D (78kB) | 0 | Mar, 2016 |
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTD30T120F2WP | Active | Pb-free
Halide free | | 联系BDTIC | NA | WJAR | 1 | $1.9 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTD30T120F2WP | 1200 | Limited by Tj(max) | 2 | | | | | | | 10 | | | |
