NGTD8R65F2: Rectifier 650V 30A FS2 bare die
Rectifier bare die intended for use as IGBT reverse diode
特性- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Optimized for High Speed Switching
- These are Pb−Free Devices
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应用- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Welding
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数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NGTD8R65F2SWK | Active | Pb-free
Halide free | | 联系BDTIC | NA | PLRNG | 1 | $0.28 |
| NGTD8R65F2WP | Active | Pb-free
Halide free | | 联系BDTIC | NA | WJAR | 1 | $0.27 |
订购产品技术参数
| Product | V(BR)CES Typ (V) | IC Max (A) | VCE(sat) Typ (V) | VF Typ (V) | Eoff Typ (mJ) | Eon Typ (mJ) | Trr Typ (ns) | Irr Typ (A) | Gate Charge Typ (nC) | Short Circuit Withstand (µs) | EAS Typ (mJ) | PD Max (W) | Co-Packaged Diode |
|---|
| NGTD8R65F2SWK | 650 | | | 2.1 | | | | | | | | | |
| NGTD8R65F2WP | 650 | | | 2.1 | | | | | | | | | |
